Integrated multi-sensor module

ABSTRACT

A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed. Such a miniature integrated multi-sensor module that features low power consumption can be used in medical monitoring and mobile computing, including smart phone applications.

BACKGROUND

1. Technical Field

The present disclosure relates to the fabrication ofapplication-specific integrated circuits (ASICs) that incorporate thinfilm environmental sensors.

2. Description of the Related Art

Mobile computing devices such as smart phones typically include embeddedelectronic sensors such as, for example, magnetic field sensors(magnetometers) that can be used to determine orientation of the smartphone relative to the earth's ambient magnetic field. In addition, smartphones typically contain one or more accelerometers that sense theacceleration of gravity directed perpendicular to the earth's surface,and can detect movement of the smart phone. However, smart phonesavailable today generally do not offer to consumers or programdevelopers features that entail sensing, monitoring, or controllinglocal environmental conditions. Providing additional environmentalsensors within smart phones, tablet computers, and the like, mayencourage program developers to create applications that otherwise mightnot be possible.

Some existing products contain miniature environmental sensors. Forexample, electronic climate control devices (e.g., thermostats) rely onelectronic sensors to trigger activation of furnaces and airconditioners for feedback control of air temperature and humidity.Electronic weather stations also rely on internal temperature sensors,barometric pressure sensors, and humidity sensors, such as, for example,those described in U.S. patent application Ser. No. 13/315,477 to LeNeelet al. Typically, these miniature environmental sensors are fabricatedon separate substrates (dies) from one another, or the sensors are builton one substrate and associated circuitry for signal processing andcontrol is fabricated on a separate die (see, for example, US PatentApplication Publication 2012/0171774A1 to Cherian et al.). Separatefabrication processes have been necessary because integrating more thanone type of environmental sensor on the same substrate, with circuitry,poses a significant challenge.

In some applications, chemical sensors have been integrated withcircuitry for analyzing a chemical sample (see, for example, US PatentApplication Publication 2012/0171713A1 to Cherian et al.). In otherapplications, chemical sensors can be built into a vehicle fordelivering to the micro-sensor a chemical or biological sample foranalysis, such as a razor blade (see, for example, US Patent ApplicationPublication 2012/0167392A1 to Cherian et al.) In further applications,it has been possible to integrate temperature and humidity environmentalsensors with the chemical sensors, for example, as disclosed in U.S.Patent Application Publication US 2012/0168882 to Cherian et al.However, in general, integration of multiple environmental sensors,including fluid sensors for measuring fluid pressure and flow rates, hasbeen challenging because sensing elements for different environmentalconditions typically require different, or even incompatible, materials.

It is noted that the references cited above are owned by the applicantsof the present patent application, and are hereby incorporated byreference in their entirety.

BRIEF SUMMARY

A solution described herein addresses these challenges by integratingtemperature, pressure, and humidity sensors onto a single semiconductordie to provide a multi-sensor module. One or more such multi-sensormodules can be used as building blocks in application-specificintegrated circuits (ASICs). Furthermore, the multi-sensor module can bebuilt on top of existing circuitry that can be used to process signalsfrom the sensors. The integrated multi-sensor module described hereinpermits a variety of ambient environmental conditions to be measured atsubstantially the same time and location, with a high level ofprecision.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In the drawings, identical reference numbers identify similar elements.The sizes and relative positions of elements in the drawings are notnecessarily drawn to scale.

FIG. 1A is schematic diagram of a conventional Wheatstone bridge.

FIG. 1B is a schematic diagram of a differential capacitor circuit thatmay be implemented on a semiconductor substrate as described herein.

FIG. 2 is a plan view of a circuit layout for an integrated multi-sensormodule as described herein, according to one embodiment.

FIG. 3 is a cross-section taken along lines 3-3, of the circuit shown inFIG. 2.

FIG. 4A is a plan view of a pressure sensing element, according to oneembodiment.

FIG. 4B is a cross-sectional view of the pressure sensing element shownin FIG. 4A, along cut lines 4-4

FIG. 5 is a flow diagram illustrating a process for fabricating themulti-sensor module shown in FIGS. 2 and 3.

FIG. 6 is a plan view of a single multi-sensor module having an addedpassivation layer that covers three of the four sensors.

FIG. 7A is a plan view of an area of ASIC layout of four of themulti-sensor modules shown in FIG. 6, having an added passivation layer.

FIG. 7B is a plan view of a patterned silicon cap as described herein.

FIG. 7C is a plan view of the patterned silicon cap shown in FIG. 7B,following adhesive bonding to the four multi-sensor modules shown inFIG. 7A.

FIG. 8 is a pictorial view of a pressure sensor testing apparatusaccording to one embodiment.

FIG. 9 is a plot of differential capacitance measurements during a testof the pressure sensor shown in FIGS. 2 and 3.

FIG. 10 is a plot of resistance as a function of temperaturedemonstrating linearity for a thin film platinum resistor used as avariable resistor in one embodiment of an integrated Wheatstone bridge.

FIG. 11 is a flow diagram for a testing protocol that can be used tocalibrate environmental sensors using a heater.

FIG. 12 is a screen shot of a smart phone running a weather stationapplication that displays data from an on-board miniature multi-sensormodule.

DETAILED DESCRIPTION

It will be appreciated that, although specific embodiments of thepresent disclosure are described herein for purposes of illustration,various modifications may be made without departing from the spirit andscope of the present disclosure. Accordingly, the present disclosure isnot limited except as by the appended claims.

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various aspects of thedisclosed subject matter. However, the disclosed subject matter may bepracticed without these specific details. In some instances, well-knownstructures and methods of semiconductor processing comprisingembodiments of the subject matter disclosed herein have not beendescribed in detail to avoid obscuring the descriptions of other aspectsof the present disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

Reference throughout the specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment. Thus, the appearance of the phrases “in oneembodiment” or “in an embodiment” in various places throughout thespecification are not necessarily all referring to the same aspect.Furthermore, the particular features, structures, or characteristics maybe combined in any suitable manner in one or more aspects of the presentdisclosure.

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various aspects of thedisclosed subject matter. However, the disclosed subject matter may bepracticed without these specific details. In some instances, well-knownstructures and methods of semiconductor processing comprisingembodiments of the subject matter disclosed herein have not beendescribed in detail to avoid obscuring the descriptions of other aspectsof the present disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

Reference throughout the specification to insulating materials orsemiconducting materials can include various materials other than thoseused to illustrate specific embodiments of the transistor devicespresented. The term “environmental sensors” should not be construednarrowly to mean only sensors for pressure, temperature, and humidity,for example, but rather, the term “environmental sensors” is broadlyconstrued to cover any type of sensor that is capable of monitoringambient characteristics.

Reference throughout the specification to conventional thin filmdeposition techniques for depositing silicon nitride, silicon dioxide,metals, or similar materials include such processes as chemical vapordeposition (CVD), low-pressure chemical vapor deposition (LPCVD), metalorganic chemical vapor deposition (MOCVD), plasma-enhanced chemicalvapor deposition (PECVD), plasma vapor deposition (PVD), atomic layerdeposition (ALD), molecular beam epitaxy (MBE), electroplating,electro-less plating, and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. For example, in somecircumstances, a description that references CVD may alternatively bedone using PVD, or a description that specifies electroplating mayalternatively be accomplished using electro-less plating. Furthermore,reference to conventional techniques of thin film formation may includegrowing a film in-situ. For example, in some embodiments, controlledgrowth of an oxide to a desired thickness can be achieved by exposing asilicon surface to oxygen gas or to moisture in a heated chamber.

Reference throughout the specification to conventional photolithographytechniques, known in the art of semiconductor fabrication for patterningvarious thin films, include a spin-expose-develop process sequenceinvolving a photoresist. Such a photolithography sequence entailsspinning on the photoresist, exposing areas of the photoresist toultraviolet light through a patterned mask, and developing away exposed(or alternatively, unexposed) areas of the photoresist, therebytransferring a positive or negative mask pattern to the photoresist. Thephotoresist mask can then be used to etch the mask pattern into one ormore underlying films. Typically, a photoresist mask is effective if thesubsequent etch is relatively shallow, because photoresist is likely tobe consumed during the etch process. Otherwise, the photoresist can beused to pattern a hard mask, which in turn, can be used to pattern athicker underlying film.

Reference throughout the specification to conventional etchingtechniques known in the art of semiconductor fabrication for selectiveremoval of polysilicon, silicon nitride, silicon dioxide, metals,photoresist, polyimide, or similar materials include such processes aswet chemical etching, reactive ion (plasma) etching (RIE), washing, wetcleaning, pre-cleaning, spray cleaning, chemical-mechanicalplanarization (CMP) and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. In some instances, two suchtechniques may be interchangeable. For example, stripping photoresistmay entail immersing a sample in a wet chemical bath or, alternatively,spraying wet chemicals directly onto the sample.

Specific embodiments are described herein with reference to examples ofintegrated micro-sensors that have been produced; however, the presentdisclosure and the reference to certain materials, dimensions, and thedetails and ordering of processing steps are exemplary and should not belimited to those shown.

In the figures, identical reference numbers identify similar features orelements. The sizes and relative positions of the features in thefigures are not necessarily drawn to scale.

FIG. 1A is a schematic of a standard, prior art, Wheatstone bridgecircuit 100. The Wheatstone bridge configuration shown is commonly usedto measure an unknown resistance 102 between S1 and S3 by adjusting avariable resistance 104. The resistance measurement is based oncomparison of the ratio of resistances on the left side of theWheatstone bridge compared to the ratio of resistances on the right sideof the Wheatstone bridge, whereV_(out)=V_(CC)(R_(m)−R_(p))/(R_(m)+R_(p)). If the resistance ratiosR_(m)/R_(p) on the right, and R_(p)/R_(m) on the left are balanced, thevoltage difference between S1 and S2 will be zero. If the resistanceratios are not equal, the voltage V_(out) between S1 and S2 will benon-zero and the value of variable resistance 104 (R_(m)) can then beadjusted to produce a zero voltage at V_(out). The resistance R_(p) ispositively correlated with temperature such that R_(p) increases as thetemperature increases, while the resistance R_(m) is negativelycorrelated with temperature such that R_(m) decreases as temperatureincreases. The Wheatstone bridge as shown in FIG. 1A is implementedherein on a silicon substrate along with other sensors as describedbelow to provide precise temperature measurements with a fast responsetime. While a Wheatstone bridge configuration is desirable because itoffers enhanced precision, the present disclosure can additionally oralternatively include a resistive temperature detector (RTD) typesensor, for example, that can use a platinum (Pt) sensing element.

FIG. 1B shows a differential capacitance circuit 150 that includes threeparallel plate capacitors for use as ambient environmental sensors:C_(p) for measuring pressure, C₀ for use as a reference pressure sensor,and C_(rh) for measuring relative humidity. In the example shown, C_(p)and C_(rh) have variable capacitance values, while C₀ is shown as havinga fixed value of capacitance. An output voltage V_(rh) characterizes anoutput signal 158 that indicates ambient relative humidity as measuredby the differential capacitor C_(rh); an output voltage V_(o)characterizes an output signal 160 that indicates a reference pressureas measured by the differential capacitor C_(o); and an output voltageV_(p) characterizes an output signal 162 that indicates ambient pressureas measured by the differential capacitor C_(p). The three capacitorsC_(p), C_(o), and C_(rh) can be connected to a common reference terminalthat may be grounded.

The Wheatstone bridge and the capacitive sensors shown in FIGS. 1A and1B, respectively, can be accompanied by a resistive heater 162. Theaddition of the resistive heater 162 is important because environmentaland biomedical species being sensed are influenced by temperature. Forexample, ambient humidity depends on temperature; moisture contentwithin a polyimide film is temperature-dependent; gas pressure andconcentrations are temperature dependent in accordance with the idealgas law, PV=nRT; and chemical reactions are also generally temperaturedependent in accordance with the Arrehnius law. The resistive heater 162has an associated resistance R_(h), which can be energized by applying avoltage V_(h). For example, the heater 162 can be integrated with thethree capacitors C_(p), C_(o), and C_(rh) as a common structuralelement, so as to influence the readings of all three devicessubstantially simultaneously. Or, the heater 162 can be implementedseparately from, but desirably in proximity to, the sensors. Theresistive heater 162 can further be used as a reset device torecondition a sensor following exposure to an extreme environment. Forexample, the resistive heater 162 can recondition a saturated humiditysensor 156 by driving moisture out of the dielectric thin film throughevaporation, thereby restoring accurate performance of the sensor. Theheater 162 can further be used as a calibration/test device as describedin further detail below. Use of such a resistive heater 162 can enhanceprecision and reproducibility of sensors, in comparison with sensorsthat lack such an on-board calibration device. Desirably, suchcalibration testing can be implemented as an automatic feature of amobile device in which the sensors are deployed. For example, a user canperform a smart phone calibration test daily to ensure the humiditysensor is still functional. In these applications, the heater 162 raisesthe local temperature to a value that is typically at or below about 100C. Additionally or alternatively, the heater 162 can be used to adjust,or tune, the properties of the dielectric thin film. In this case, theheater 162 can be pulsed in a controlled fashion for millisecond-longpulses to raise the temperature from about 100 C to as high as about 800C.

The Wheatstone bridge shown in FIG. 1A and the differential capacitorsshown in FIG. 1B, along with the resistive heater 162, can beimplemented as components of a semiconductor-based multi-sensor module200. FIG. 2 shows a top-down view of the semiconductor-basedmulti-sensor module 200, according to an exemplary embodiment. In theexample shown, the multi-sensor module 200 includes four sensorsco-located on a common silicon substrate: the reference pressure sensor152, the pressure sensor 154, the humidity sensor 156, and theWheatstone bridge 100 implemented as a temperature sensor 208. However,the multi-sensor module 200 is not limited to such a configuration. Forexample, other embodiments can include a different arrangement ofsensors than the one shown. In still other embodiments, a differentnumber of sensors may be included, or sensors of different types thanthose shown.

The temperature sensor 208 can be laid out as an integrated Wheatstonebridge circuit corresponding to the schematic shown in FIG. 1A, in whichcontacts for receiving the sensor signals S1, S2, S3, S4 shown in FIG. 2correspond to those shown in FIG. 1A. The resistors denoted as R_(m) inFIG. 1A are indicated in FIG. 2 by a decreasing arrow to show that theyhave a negative thermal coefficient of resistance (TCR) such that theirresistance varies inversely with temperature (i.e., resistance decreasesas temperature increases). The resistors denoted as R_(p) have apositive TCR such that their resistance increases as temperatureincreases. The Wheatstone bridge so configured can be balanced if theTCR values of the two different materials used to form the resistiveelements 209 a and 209 b are equal and opposite. To ensure that theresistive elements are highly temperature-sensitive, a TCR value havinga magnitude of about 3000 is desirable.

The three parallel plate capacitor sensors 152, 154, 156 correspond tothe differential capacitors C₀, C_(p), C_(rh), respectively, shown inFIG. 1B. As shown in FIG. 2, the three parallel plate capacitor sensors152, 154, 156 are configured with metal mesh top plates 212, 214, 216,respectively, while they share a common bottom plate 210 made of asubstantially solid, continuous, piece of metal. Disposed between themetal mesh top plates 212, 216 and the common bottom plate 210, for eachparallel plate capacitor sensor, is a thin capacitive dielectric film217 that is sensitive to ambient environmental conditions. A purpose ofthe metal mesh top plates 212, 214, 216 is to provide continuousexposure of the dielectric film 217 to the same ambient environmentthrough 1-2 μM wide openings 218 in the mesh. When the capacitivedielectric film 217, or membrane, is exposed to the environment,pressure on the membrane decreases the membrane thickness, therebychanging the capacitance of the sensor device. Similarly, changes inambient humidity can cause the capacitive dielectric film 217 to expandor contract, thereby changing the membrane thickness, and in turn thecapacitance of the sensor. The pressure sensor capacitor C_(p) does notinclude the capacitive dielectric film 217.

Interconnect circuitry configured to extract signals from themulti-sensor module 200 can include a reference sensor interconnect 232,a pressure sensor interconnect 234, and a humidity sensor interconnect236, each of which can extract signals from the metal mesh top plates212, 214, 216, respectively. In addition, heater interconnects 240 a,240 b, 240 c can access the common bottom plate 210, which serves as ahot plate for performing sensor calibration tests, either pre-programmedin an auto-test mode, or on an as-needed basis.

FIG. 3 shows a side view of the multi-sensor module 200 shown in FIG. 2,including the reference pressure sensor 152, pressure sensor 154,relative humidity sensor 156, and temperature sensor 208. Each sensorincludes one or more thin film sensing elements designed to be highlysensitive to environmental conditions. The temperature sensor 208 isdesigned to be accurate to within about ±1 degree; the relative humiditysensor 156 is designed to be accurate to within about ±3%; and thepressure sensors 152 and 154 are designed to be accurate to within about±1 mbarr. Choice of materials for the various structures shown in FIG. 3can determine the degree of success of integrating the various sensorsonto a common substrate.

The multi-sensor module 200 can be built on a non-active substrate 302that is made of, for example, crystalline silicon, amorphous silicon(glass), or polysilicon. Alternatively, the multi-sensor module 200 canbe built on top of active silicon devices in a monocrystalline siliconsubstrate. For example, underlying logic circuitry, includingtransistors formed in the silicon substrate, can be configured to readand process sensor signals generated by the multi-sensor module 200. Itis generally advantageous for the substrate 302 to be thermally stableso as to act as a thermal barrier to protect the multi-sensor module 200from heat generated by surrounding active circuitry. An insulating oxidelayer 304 can be deposited on the surface of the substrate 302, to athickness of about 2 microns to further separate the multi-sensor module200 from the substrate 302.

Differential capacitor elements within the multi-sensor module 200include, as components, the common bottom plate 210, one or moreenvironmentally sensitive capacitive dielectric films 217, and metalmesh top plates 212, 214, 216. The common bottom plate 210, which actsas a heating element, is desirably made of a refractory metal having alow thermal coefficient of resistance (TCR) such as tantalum aluminum(TaAl), titanium (Ti), or tungsten silicon nitride (WSiN). Suchmaterials are advantageous because they can withstand changingtemperatures throughout a wide range of several hundred to severalthousand degrees Celsius. In addition, such materials exhibit a mediumsheet resistance so they can dissipate hot spots that can develop, atwhich temperatures can exceed 1000C. Alternatively, the common bottomplate (heater) can be made of platinum so that the same material can beused for both sensing and heating. The metal mesh top plates 212, 214,216 can be made of aluminum, or another suitable metal.

The desired material for the capacitive dielectric film 217 in theexample shown is a 1-4 um thick layer of polyimide for both the humiditysensor 156 and the reference pressure sensor 152. It is generallyadvantageous to use the thinnest possible capacitive dielectric film 217(e.g., 1 μm) to reduce topography, thus producing a smoother surface.The desired material for the capacitive dielectric film 217 used in thepressure sensor 154 shown is air (i.e., the dielectric is formed as acavity 305 that can be filled by the passage of ambient air through theopenings 218 a in the mesh top plate 214).

Between each capacitive dielectric film 217 and metal mesh top platethere can be formed a second dielectric layer 306 of, for example, about0.5 μM of silicon nitride (Si₃N₄) or silicon carbide (SiC), to providethermal transmission so as to readily dissipate heat. Surrounding themetal mesh top plates there can be deposited a third dielectricpassivation layer 308 of, for example, 0.5 μm-thick silicon nitride(Si₃N₄). In accordance with the embodiment shown, thedielectric/metal/passivation total stack height in the embodiment shownis about 1 μm. The width of the second and third (passivation)dielectrics between the metal mesh regions and the neighboring openingsshown is also about 1 μm. The second dielectric layer 306 and the metalmesh top plate 214 over the pressure sensor act as a floating membranethat expands and contracts with pressure inside the cavity 218 a.

Finally, a thick protective layer 310, shown in FIG. 3 as a polyimidefilm having a thickness of about 6 μm, can be spun on at roomtemperature to cover the reference pressure sensor 152. An optionalsilicon nitride (SiN).cap can be deposited to shield the photo-sensitivepolyimide protective layer 310 from exposure to light.

The temperature sensor 208 within the integrated multi-sensor module 200includes exemplary multi-layer resistive elements, one of which is shownin cross section at the far right of FIG. 3. Each resistive element canbe made up of layers that can include the common bottom plate 210, asecond metal layer 312, the second dielectric layer 306, and a thirdmetal layer 314. The second metal layer 312 can be made of, for example,AlCu. The third metal layer can be made of, for example, aluminum thatcan be capped with a thin, high TCR metal such as a platinum (Pt) caplayer 316 of about 100 Å. Alternatively, the cap layer 316 can be madeof a chromium silicon (CrSi) material, which also has a high TCR.

FIGS. 4A and 4B show detailed, magnified views of a representativecapacitive environmental sensor, for example, the pressure sensor 154. Atop-down magnified view of one corner of the metal mesh top plate 214 isshown in FIG. 4A. In one embodiment, square and diamond-shaped openings218 a and 218 b, respectively, arranged in a matrix, are shownsurrounded by the metal mesh top plate 214. The polyimide film 217remains underneath the diamond-shaped openings 218 b which correspond tothe reference pressure sensors 152 and the humidity sensors 156. Howeverthe polyimide film 217 is removed from the square-shaped openings 218 a,which correspond to the pressure sensors 154. The underlying capacitivedielectric 217 is visible through both the openings 218 a and 218 b.

FIG. 4B represents a side view of the pressure sensor 154 as it appearson a scanning electron micrograph taken at 3000× magnification. The toplayer, according to an exemplary embodiment, is the third metal layer314. Underneath the third metal layer 314 is shown the 500 nm thicksilicon nitride layer 306. The metal mesh top plate 214 extends betweeneach of the openings 218 a. The diamond-shaped openings 218 b arelocated in a plane behind the cut plane 4-4. The third metal layer 314and the silicon nitride layer 306 together form a membrane that isanchored on the metal mesh top plate 214 between the square-shapedopenings 298 a. Over the square-shaped openings, however, the membranefloats in response to pressure variations, wherein the capacitivedielectric 217, in this case, polyimide, has been removed by etching,for example, using an oxygen-based dry etch. Underneath the polyimidecapacitive dielectric 217 is shown the common bottom plate 210, whichrests on the thick insulating oxide 304, and in turn, on the siliconsubstrate 302.

FIG. 5 presents a high-level process flow 500 that describes basicactions in an exemplary fabrication process that can be used to createthe structures shown in FIGS. 2, 3, 4A, and 4B. In general, constraintsexist on the process temperatures at most steps in the process flow 500,due to the presence of polyimide thin films and other delicatematerials. These include very thin films of only a few nm used asmembranes to sense environmental humidity, pressure, and temperature.Thermal treatment and stress of post-processing can have a significanteffect on film performance. Processing temperatures below about 300 Care typically safe for polyimide thin films. Different formulations ofpolyimide may be used at different steps, and the presence or parametersof polyimide cure steps can also be varied to reduce shrinkage assolvents tend to outgas from the polyimide film at higher temperatures.

At 502, logic circuitry can be optionally fabricated underneath theactive sensor layer to process sensor signals.

At 503, a layer of insulation such as the oxide layer 304 can be formedon the silicon substrate 302. Alignment marks can be patterned in theoxide to assist in alignment of subsequent layers.

At 504, a metal interconnect structure can be formed, including at leasttwo patterned layers of metal separated by an inter-layer dielectric(ILD). First, a low TCR metal layer, the common bottom plate 210, can bedeposited and patterned using a dry chlorine etch. A second metal layer312 can then be deposited and patterned using a wet etch to formresistive elements making up the temperature sensor 208. Next, aphoto-sensitive film such as polyimide can be spun on using a spincoater, and can then be patterned using conventional photolithographytechniques as described above.

At 506, the first dielectric layer 217 can be deposited and patterned toetch vias between the first and second metal layers. The firstdielectric layer 217 provides the dielectric between the capacitorplates of the differential capacitive sensors 152, 154, 156. Followingthe via etch, the third metal layer 314 can be deposited and patternedusing standard metal deposition and photolithography techniques.

At 508, formation of the active sensors can be completed. The seconddielectric layer 306 can be deposited and patterned using standard thinfilm deposition, photolithography, and conventional via etch techniques.Next, thin film resistor (TFR) connectors can be formed, from whichsignals S1, S2, S3, S4 can be obtained. A conventional metal depositionprocess can be used, with close control of the deposition time toproduce a 5-10 nm thick film. Next, the actual TFR temperature sensorscan be patterned.

At 510, the dielectric 217 can be removed from the pressure sensor 154to form the void 305, thus opening a cavity in the active sensor layer.This can be done by partially etching the dielectric 217 using anisotropic O₂ plasma etch.

At 512, the openings 218 can be etched in the relative humidity sensor156 to expose the void 305 to the ambient environment.

At 514, the thick protective covering 310 can be formed by deposited andpatterning polyimide using a wet etch process. Finally, a siliconnitride cap can be adhesively bonded to the uncured polyimide thickprotective covering 310.

FIG. 6 shows one embodiment of a passivated multi-sensor module 600,over which a patterned passivation layer 602 has been deposited. Thepassivated multi-sensor module 600 shown is configured such that thehumidity sensor 156 and the pressure sensor 154 are in differentpositions compared with the multi-sensor sensor module 200. In thisexample, the patterned passivation layer 602 leaves the humidity sensor156 uncovered so as to allow the dielectric membrane of the humiditysensor 156 ample exposure to ambient moisture variation. The referencesensor 152, labeled “C_(o),” is underneath the patterned passivationlayer 602. The patterned passivation layer 602 also exposes a row ofelectrical contact pads 604 so that signals are accessible to be readfrom the sensors. A voltage can be applied to contact pads 606 to usethe common bottom plate 210 as a heater. The patterned passivation layer602 can be made of a standard passivation material such as polyimide,for example.

FIG. 7A shows an exemplary ASIC sensor module layout 700 that includesfour passivated multi-sensor modules 600, each multi-sensor modulehaving the added passivation layer 602 as shown in FIG. 6. The twopassivated multi-sensor modules 600 on the left are in a mirror-imagearrangement, as are the two passivated multi-sensor modules 600 on theright. Such a mirror-image arrangement results in greater structuralstability after a silicon cap is attached as described below.

FIG. 7B shows three exemplary patterned silicon caps 710, 720, 725 forattachment to the exemplary ASIC sensor module layout 700. The patternedsilicon caps 710, 720, 725 are silicon substrates, about 300 micronsthick, configured with openings 730, 740, 750 that are sized anddimensioned to align with selected sensors. The patterned silicon caps710, 720, 725 can be adhesively bonded to the layout 700 to form alaminate that protects portions of each multi-sensor module 600 whileallowing contact between the sensor membranes and the ambientenvironment (e.g., air). The passivation layer, for example, a polyimidefilm or a dry photoresist, can serve as an adhesive if left uncureduntil after the bonding is complete. The bonding process is desirablycarried out at a low temperature. After bonding, the adhesive layer canbe cured in an oxygen environment at a temperature of about 300-350 C.

FIG. 7C shows the silicon caps 725 attached to the ASIC sensor modulelayout 700. The silicon caps 725 expose the temperature sensors 208, thepressure sensors 154, the humidity sensors 156, and the rows ofelectrical contact pads 604. In the example shown, only the referencepressure sensors 152 are covered by the silicon caps 725. Because theopenings are needed for sensing ambient environmental conditions, thefinal product is essentially environmentally unprotected. In otherembodiments, depending on the application, the silicon caps 725 mayalign with different sensors.

FIG. 8 shows a pressure sensor testing apparatus 800 for measuringsensitivity of the differential capacitive pressure sensor. The pressuresensor testing apparatus includes a bellows 802 for creating a pressuredisturbance 804 in the ambient environment of a differential capacitivepressure sensor module 806. The pressure sensor module 806 includes apressure sensor 154 and a reference pressure sensor 152.

FIG. 9 is a plot of capacitance data collected from the testingapparatus 800 during a pressure sensor test. In a first cycle, thebellows 802 was used twice in succession to blow air toward the thincapacitive dielectric film 217 within the pressure sensor module 806.After the pressure disturbances ceased, the capacitance value recoveredto nearly its initial level. In a second cycle, the bellows 802 was usedto blow air once more toward the thin capacitive dielectric film 217within the pressure sensor module 806. After the pressure disturbancesceased, the capacitance value again recovered to nearly its initiallevel.

FIG. 10 is a plot of experimental resistance measurements showing linearbehavior of the integrated circuit Wheatstone bridge that can be used asthe temperature sensor 208. The linear measurements shown, of resistanceas a function of temperature, were taken using a platinum (Pt) thin filmfor the variable resistor R_(m) and a chromium silicon (CrSi) thin filmhaving low TCR, below 30 ppm, for the sensor resistor R_(p).

FIG. 11 is a flow diagram describing an exemplary test protocol 1100which is a sequence of steps for performing a calibration test in anauto-test mode using the resistive heater 162. The test protocol 1100 asshown tests the relative humidity sensor 156 and the temperature sensor208 by heating the local environment and taking sensor readings atselected time intervals to confirm that the sensors are responding asexpected. In response to heating, the reading from the temperaturesensor 208 should increase, while the relative humidity level shoulddecrease. After switching off the heater 162 and waiting for a secondtime interval, the readings should return to their original values. Thetest protocol 1100 can be executed as follows:

At 1102, baseline temperature and humidity readings T0 and RH0,respectively, are taken at a time T₀.

At 1104, the heater 167 can receive a pulsed electric signal to raisethe local temperature by a measurable amount. For example, the heatercan be pulsed on and off every second at a current level of 20 mA for atime interval T₁, perhaps about one minute. Such heating would beexpected to raise the detected temperature and lower the detectedhumidity.

At 1106, (time T₁) readings can be obtained from the temperature sensor208 and the humidity sensor 156.

At 1108, the readings at time T₁ can be evaluated. For example, arelative humidity reading that is less than the baseline relativehumidity reading but within about 1-5% indicates no change, i.e., thehumidity sensor 208 is not responding. In this case, an alarm signal canbe triggered at 1110. If it is determined at 1112 that the alarm is afirst alarm, the test protocol 1100 may be re-started. However, if at1112, it is determined that the alarm is a repeat alarm, continuing toindicate that the humidity sensor 156 is still not responding, thehumidity sensor 156 can be disabled at 1114.

At 1116, a waiting period is set for a selected time interval, forexample, 5 seconds.

At 1118, after waiting until a time T₂, during which the temperature canreturn to an ambient level, a confirmation reading can be taken at atime T₂.

At 1120, if the temperature and relative humidity readings at time T₂have returned to substantially the same readings as at time T₀, thesensors are confirmed at 1122 to be working correctly, and the testprotocol 1100 is complete. Readings that are substantially differentfrom those at time T₀ are unexpected, causing the test protocol 1100 tobe repeated.

FIG. 12 shows a smart phone 1200 equipped with a semiconductor-basedmulti-sensor module 600 that can be used to monitor ambientenvironmental conditions in real time. A small die size and low powerconsumption make the multi-sensor module 600 especially suited formobile computing applications.

A shell of the smart phone 1200 can be modified so as to allow exposureof the capacitive sensors to ambient air. An exemplary smart phoneapplication (“app”) can, for example, be programmed to display on thesmart phone screen 1209 weather station icons 1210. The smart phone appcan report measurements of temperature, relative humidity, and pressure,via the readouts 1202, 1204, and 1206, respectively. The smart phone appcan further provide an assessment of air quality 1208 based on acomparison of the measurements to a selected standard. The standard canbe pre-programmed or set by a user of the smart phone, for example.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

1. A semiconductor-based multi-sensor module, comprising: a differentialpressure sensor positioned on a silicon substrate, the differentialpressure sensor having a pair of parallel plate capacitors, eachcapacitor including a pressure-sensing dielectric film; a temperaturesensor adjacent to the differential pressure sensor on the same siliconsubstrate and configured for continuous exposure to the same ambientenvironment, the temperature sensor having a thin film Wheatstone bridgethat is highly sensitive to ambient temperature changes; and adifferential humidity sensor adjacent to the pressure and temperaturesensors on the same silicon substrate, the differential humidity sensorhaving a pair of parallel plate capacitors, each capacitor including adielectric film sensitive to ambient relative humidity.
 2. Themulti-sensor module of claim 1, further comprising a reference pressuresensor positioned adjacent to the pressure sensor on the same siliconsubstrate.
 3. The multi-sensor module of claim 1, further comprisinginterconnect circuitry configured to extract signals from themulti-sensor module and apply signals to the sensors via a common bottomplate so as to heat the sensors for calibration and testing.
 4. Themulti-sensor module of claim 3 wherein the interconnect circuitry isprogrammed to execute a selected test protocol in an auto-test mode. 5.An application-specific integrated circuit (ASIC), comprising amulti-sensor module that includes a pressure sensor, a temperaturesensor, and a relative humidity sensor co-located on a common siliconsubstrate, the sensors configured for continuous exposure to the sameambient environment.
 6. The ASIC of claim 5 wherein the multi-sensormodule further comprises a reference pressure sensor disposed adjacentto the pressure sensor.
 7. The ASIC of claim 5 wherein the multi-sensormodule further comprises interconnect circuitry configured to extractsignals from the sensors and apply signals to the sensors via a commonbottom plate so as to heat the sensors for calibration and testing. 8.The ASIC of claim 5, further comprising a protective silicon nitride capthat covers the multi-sensor module, excluding the temperature sensor.9. The ASIC of claim 5, further comprising a protective silicon cap,wherein the continuous exposure of the multi-sensor module to the sameambient environment is provided by a single sensor window in the siliconcap.
 10. The ASIC of claim 8 wherein the silicon cap is a patternedsilicon wafer adhesively bonded to the multi-sensor module.
 11. The ASICof claim 8 wherein the silicon cap includes at least one opening throughwhich electrical connections can be made to the multi-sensor module. 12.The ASIC of claim 5, further comprising logic circuitry configured toread and process signals generated within the multi-sensor module.
 13. Amethod of fabricating an integrated multi-sensor module on a singleplatform, the method comprising: forming a layer of insulation on asilicon substrate; forming a metal interconnect structure above thelayer of insulation, the metal interconnect structure including at leasttwo patterned layers of metal separated by an inter-layer dielectric, inwhich vias are formed to establish electrical connections between thepatterned layers of metal; forming an active sensor layer configured tosense environmental conditions; opening cavities in the active sensorlayer; exposing the cavities to an ambient environment; and forming asilicon cap over a portion of the active sensor layer, the silicon caphaving a window formed therein, the window aligned with the cavities soas to maintain exposure of the cavities to the ambient environment. 14.The method of claim 13 wherein at least a portion of the active sensorlayer is made of polyimide.
 15. The method of claim 13 wherein the actsof opening cavities, exposing the cavities, and forming a silicon capare performed at a temperature below a characteristic temperature of thepolyimide.
 16. The method of claim 13 wherein the active sensor layercomprises at least two environmental sensors co-located so as to sensethe same ambient environment.
 17. The method of claim 16 wherein thesensors include two or more of a pressure sensor, a temperature sensor,a relative humidity sensor, and a reference sensor.
 18. The method ofclaim 13 wherein the silicon substrate is in the form of amorphoussilicon, and the silicon substrate is electrically isolated from theactive sensor layer by a layer of silicon dioxide.
 19. The method ofclaim 13, further comprising, prior to forming the metal interconnect,forming logic circuitry configured to read and process signals generatedwithin the active sensor layer and apply signals to the sensors via acommon bottom plate so as to heat the sensors for calibration andtesting.
 20. The method of claim 13, further comprising forming aprotective silicon nitride cap over a portion of the active sensorlayer.